Modeling the Point-Spread Function in Helium-Ion Lithography

被引:19
|
作者
Winston, Donald [1 ,2 ]
Ferrera, J. [1 ]
Battistella, L. [1 ]
Vladar, A. E. [2 ]
Berggren, K. K. [1 ,3 ]
机构
[1] MIT, Cambridge, MA 02139 USA
[2] NIST, Gaithersburg, MD 20899 USA
[3] Delft Univ Technol, Delft, Netherlands
关键词
Monte Carlo modeling; focused ion beam; metrology; electron-beam lithography; SECONDARY-ELECTRON EMISSION; HYDROGEN SILSESQUIOXANE; BEAM LITHOGRAPHY; STOPPING POWER; ENERGY; SOLIDS;
D O I
10.1002/sca.20290
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary electron (SE) yield in helium-ion microscopy. This approach traces along SRIM-produced helium-ion trajectories, generating and simulating trajectories for SEs using a Monte Carlo method. We found, both through simulation and experiment, that the spatial distribution of energy deposition in a resist as a function of radial distance from beam incidence, i.e. the point spread function, is not simply a sum of Gauss functions. SCANNING 33: 121128, 2012. (c) 2011 Wiley Periodicals, Inc.
引用
收藏
页码:121 / 128
页数:8
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