Tuning the Performance of Organic Spintronic Devices Using X-Ray Generated Traps

被引：63

作者：

Rybicki, J. ^{[1
]}

Lin, R. ^{[1
]}

Wang, F. ^{[1
]}

Wohlgenannt, M. ^{[1
]}

He, C. ^{[2
]}

Sanders, T. ^{[2
]}

Suzuki, Y. ^{[2
,3
,4
]}

机构：

[1] Univ Iowa, Dept Phys & Astron, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 07期

关键词：

ROOM-TEMPERATURE; LARGE MAGNETORESISTANCE; INJECTION; MECHANISM;

D O I：

10.1103/PhysRevLett.109.076603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X rays produced during electron-beam deposition of metallic electrodes drastically change the performance of organic spintronic devices. The x rays generate traps with an activation energy of approximate to 0.5 eV in a commonly used organic. These traps lead to a dramatic decrease in spin-diffusion length in organic spin valves. In organic magnetoresistive (OMAR) devices, however, the traps strongly enhance magnetoresistance. OMAR is an intrinsic magnetotransport phenomenon and does not rely on spin injection. We discuss our observations in the framework of currently existing theories.

引用

页数：5

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