Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers

被引：9

作者：

Ryoo, Hyun-Joo ^{[1
]}

Yoon, Sung-Min ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 17104, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 11期

关键词：

Logic gates; Tunneling; Synapses; Indexes; Electrodes; Aluminum oxide; Thin film transistors; Charge-trap-type; oxide semiconductor; synaptic operation; dual-gate configuration; thin film transistor; IMPLEMENTATION;

D O I：

10.1109/LED.2020.3023138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Synaptic operations of all-oxide based charge-trap oxide synapse TFTs using dual-gate configuration (DG CTOx-STFTs) were demonstrated. Short-term plasticity of biological synapses were successfully mimicked by paired-pulse facilitation. Furthermore, by adopting an incremental step potentiation pulse scheme, the amount of detrapped charge could be calculated from the gradually modulated channel conductance. The multi-valued assigned states exhibit stable long-term plasticity characteristics. The introduction of DG configuration was found to be a good solution to effectively control the CTOx-STFTs.

引用

页码：1661 / 1664

页数：4

共 26 条

[21] Transparent Oxide Thin-Film Transistors with Vertical Channel Structure Using Atomic-Layer-Deposited In-Ga-Zn-O Thin Films
Kim, Yeo-Myeong
Kim, Gi-Heon
Yoon, Sung-Min
2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2017, : 312 - 315
[22] Brain-like Synaptic Operations of Thin-Film Transistors Using In-Ga-Zn-O Active Channel and PVP-SBA Electrolytic Gate Insulator
Kim, Yeo-Myeong
Kim, Eom-Ji
Lee, Won-Ho
Oh, Ji-Yeong
Yoon, Sung-Min
2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2016, : 15 - 18
[23] Short-term and long-term memory operations of synapse thin-film transistors using an In-Ga-Zn-O active channel and a poly(4-vinylphenol)-sodium β-alumina electrolytic gate insulator
Kim, Yeo-Myeong
Kim, Eom-Ji
Lee, Won-Ho
Oh, Ji-Young
Yoon, Sung-Min
RSC ADVANCES, 2016, 6 (58): : 52913 - 52919
[24] In-panel 31.17dB 140kHz 87μW Unipolar Dual-gate In-Ga-Zn-O Charge-Sense Amplifier for 500dpi Sensor Array on Flexible Displays
Papadopoulos, Nikolas
Steudel, Soeren
De Roose, Florian
Elgabry, Doaa M.
Kronemeijer, Auke Jisk
Genoe, Jan
Dehaene, Wim
Myny, Kris
ESSCIRC 2018 - IEEE 44TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2018, : 194 - 197
[25] Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Zn-O Channel Layers
Ahn, Hyun-Min
Kwon, Young-Ha
Seong, Nak-Jin
Choi, Kyu-Jeong
Hwang, Chi-Sun
Yoon, Sung-Min
ELECTRONIC MATERIALS LETTERS, 2022, 18 (03) : 294 - 303
[26] Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeOx ILs Using Ultrafast Charge Trap-Detrap Techniques
Joishi, Chandan
Ghosh, Sayantan
Kothari, Shraddha
Parihar, Narendra
Mukhopadhyay, Subhadeep
Mahapatra, Souvik
Lodha, Saurabh
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (10) : 4245 - 4253

← 1 2 3 →