Numerical analysis of a PbTiO3 ferroelectric thin-film infrared optical diode

A thin PbTiO3-n-p(+) silicon diode has been developed, in which the conductivity increases with the infrared light power, The infrared-sensitive part consists of PbTiO3 ferroelectric thin film deposited by RF sputtering, The diode has smaller heat capacity compared with the other conventional infrared sensors because the tunneling current is allowed through the PbTiO3 layer so that the PbTiO3 film thickness can be thinned, In this paper, the numerical analysis of the operational mechanism such as the effects of infrared light power on the depletion layer width, n-p(+) junction voltage, surface depletion region voltage drop, and voltage drop across the thin PbTiO3 film are reported in detail, Furthermore, some experimental measurements such as the effects of infrared light power on current-voltage (I-V) curves and the dielectric constant of PbTiO3 film have been shown to compare with the theoretical analysis, The fit is quite good.