Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit

被引：13

作者：

Abbate, Carmine ^{[1
]}

Busatto, Giovanni ^{[1
]}

Sanseverino, Annunziata ^{[1
]}

Velardi, Francesco ^{[1
]}

Ronsisvalle, Cesare ^{[2
]}

机构：

[1] Univ Cassino & Lazio Meridionale, I-03043 Cassino, Italy

[2] Fairchild Semicond GmbH, D-85609 Aschheim, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 09期

关键词：

Oscillations; power semiconductor devices; semiconductor device modeling; NEGATIVE GATE CAPACITANCE;

D O I：

10.1109/TED.2015.2459135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The purpose of this paper is to present a detailed experimental and numerical study on the mechanisms involved in Insulated Gate Bipolar Transistor (IGBT) instability during turn-ON short circuit that can compromise its robustness in particular load and driving conditions. It is shown that the IGBT may exhibit oscillations at both low and high frequencies depending on different physical mechanisms. Furthermore, a new methodology that allows determining the stability limits of the device in relation with the parameters of the external circuit is proposed. The experimental measurements confirm the obtained results.

引用

页码：2952 / 2958

页数：7

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