InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications

被引：1
|
作者：
Toropov, AA
Terent'ev, YV
Shubina, TV
Sorokin, SV
Sedova, IV
Kaygorodov, VA
Solov'ev, VA
Mel'tser, BY
Ivanov, SV
Kop'ev, PS
Buyanova, IA
Chen, WM
机构：
[1] RAS, Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 03期
关键词：
D O I：
10.1002/pssb.200304264
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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收藏
页码：704 / 707
页数：4
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