Large-signal characterization of AlGaAs/GaAs HBT's

被引：4
|
作者：
Li, B
Prasad, S
Yang, LW
Wang, SC
机构：
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[2] TRW Co Inc, Redondo Beach, CA 90278 USA
[3] Lockheed Sanders, Nashua, NH 03060 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1999年 / 47卷 / 09期
基金：
美国国家科学基金会;
关键词：
Ebers-Moll model; HBT; large signal; self-heating;
D O I：
10.1109/22.788597
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A modified Ebers-Moll level(3) model is developed for ALGaAs/GaAsheterojunction bipolar transistors (HBT's), The self-heating effect is modeled by a thermal-electrical sub-circuit. The model is verified by comparing the large-signal RF simulation and measurement. Good agreement is achieved when the HBT is biased at low de power dissipation. The discrepancy between simulation and measurement when the HBT is biased at high de power dissipation is explained by considering the self-heating effect under large-signal RF excitation.
引用
收藏
页码：1743 / 1746
页数：4
相关论文
共 50 条
  • [41] DESIGN OF GAAS MESFET OSCILLATOR USING LARGE-SIGNAL S-PARAMETERS
    MITSUI, Y
    NAKATANI, M
    MITSUI, S
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1977, 25 (12) : 981 - 984
  • [42] Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs
    Shirokov, MS
    Cherepko, SV
    Du, XH
    Hwang, JCM
    Teeter, DA
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (04) : 1084 - 1094
  • [43] LARGE-SIGNAL MODULATION OF GaAs LASER DIODES.
    Schicketanz, Dieter
    Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports, 1975, 4 (06): : 325 - 330
  • [44] A GAAS-FET MODEL FOR LARGE-SIGNAL APPLICATIONS
    PETERSON, DL
    PAVIO, AM
    KIM, B
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 276 - 281
  • [45] LARGE-SIGNAL GAAS MESFET MODEL AND DISTORTION ANALYSIS
    MINASIAN, RA
    ELECTRONICS LETTERS, 1978, 14 (06) : 183 - 185
  • [46] LARGE-SIGNAL MODELING OF GAAS-MESFET OPERATION
    SNOWDEN, CM
    HOWES, MJ
    MORGAN, DV
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1817 - 1824
  • [47] HBT large-signal model and design of PIN/HBT monolithic integrated photoreceiver front-end
    Wu, Qiang
    Huang, Yong-Qing
    Huang, Hui
    Miao, Ang
    Li, Yi-Qun
    Ren, Xiao-Min
    Bandaoti Guangdian/Semiconductor Optoelectronics, 2008, 29 (06): : 941 - 944
  • [48] ON THE USE OF S-PARAMETER MEASUREMENTS TO MODEL HBT INTRINSIC ELEMENTS FOR LARGE-SIGNAL ANALYSIS PURPOSES
    HAJJI, R
    GHANNOUCHI, FM
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1993, 6 (10) : 605 - 607
  • [49] Physical scaling rules for AlGaAs/GaAs power HBT's based on a small-signal equivalent circuit
    Schaper, U
    Zwicknagl, P
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (07) : 1006 - 1009
  • [50] LARGE-SIGNAL STABILITY AND SPECTRUM CHARACTERIZATION OF A MEDIUM POWER HBT USING ACTIVE LOAD-PULL TECHNIQUES
    GHANNOUCHI, FM
    BEAUREGARD, F
    KOUKI, AB
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1994, 4 (06): : 191 - 193
12345