Large-signal characterization of AlGaAs/GaAs HBT's

被引：4
|
作者：
Li, B
Prasad, S
Yang, LW
Wang, SC
机构：
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[2] TRW Co Inc, Redondo Beach, CA 90278 USA
[3] Lockheed Sanders, Nashua, NH 03060 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1999年 / 47卷 / 09期
基金：
美国国家科学基金会;
关键词：
Ebers-Moll model; HBT; large signal; self-heating;
D O I：
10.1109/22.788597
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A modified Ebers-Moll level(3) model is developed for ALGaAs/GaAsheterojunction bipolar transistors (HBT's), The self-heating effect is modeled by a thermal-electrical sub-circuit. The model is verified by comparing the large-signal RF simulation and measurement. Good agreement is achieved when the HBT is biased at low de power dissipation. The discrepancy between simulation and measurement when the HBT is biased at high de power dissipation is explained by considering the self-heating effect under large-signal RF excitation.
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页码：1743 / 1746
页数：4
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