Diffusion barrier performance of Zr-N/Zr bilayered film in Cu/Si contact system

被引:3
|
作者
Wang, Ying [1 ]
Cao, Fei [1 ]
Ding, Ming-hui [2 ]
Liu, Yun-tao [1 ]
机构
[1] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China
[2] Harbin Engn Univ, Sch Mat Sci & Chem Engn, Harbin 150001, Peoples R China
关键词
D O I
10.1016/j.microrel.2008.08.003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zr-N/Zr bilayered film as a diffusion barrier between Cu and Si is evaluated. The thermal stability of the diffusion barrier is investigated by annealing the Cu/Zr-N/Zr/Si samples in N-2 for an hour. XRD, SEM and AES results for the above contact systems after annealing at 700 degrees C show that Cu film has preferential (111) crystal orientation and no diffraction peaks of Cu3Si and a Cu-Zr-Si ternary compound are observed for all Cu/Zr-N/Zr/Si contact systems. In addition, the atomic distribution of Zr and Si is evident and grows with increasing temperature up to 700 degrees C, which corresponds to the Zr-Si phase having low contact resistivity. Low contact resistivity and high thermal stability diffusion barrier can be expected by the application of the Zr-N/Zr bilayered film as a diffusion barrier between Cu and Si. (C) 2008 Published by Elsevier Ltd.
引用
收藏
页码:1800 / 1803
页数:4
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