Studies of crystallization kinetics in a-Se80-xTe20Cdx and a-Se80-xTe20Gex alloys using DC conductivity measurements

The crystallization kinetics of a-Se80-xTe20Cdx (x=0, 5, 10, 15) and a-Se80-xTe20Gex (x=5, 15, 20) alloys has been studied by an isothermal method. For this purpose, conductivity measurements are done during isothermal annealing at various temperatures between the glass transition and crystallization temperatures. Avrami's equation is used to calculate the activation energy of crystallization (E-c) and order parameter (n). It is shown that Avrami's theory of isothermal crystallization correctly describes the crystallization kinetics in the present alloys. The composition dependence of E-c in these alloys has also been discussed.