INFLUENCE OF EVAPORATION CONDITIONS ON Mg/Si(111) INTERFACE FORMATION

被引：0
|
作者：
Galkin, K. N. [1 ]
Korobtsov, V. V. [1 ]
Kumar, M. [2 ]
Shivaprasad, S. M. [2 ]
机构：
[1] RAS, Far Eastern Branch, Inst Automat & Control Proc, Opt & Electrophys Lab, Radio Str 5, Vladivostok 690041, Russia
[2] Natl Phys Lab, Surface Phys & Nanostruct Grp, New Delhi 110012, India
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES | 2007年
关键词：
D O I：
10.1142/9789812770950_0047
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
The influences of evaporation flux rate and substrate temperature on Mg/Si (111) interface formation have been studied. At the flux rate of about 0.08 nm/min and substrate temperatures of 100-140 degrees C only continuous films of magnesium silicide have been grown. But at the flux rate of about 0.5 nm/min and substrate temperatures of 100-150 degrees C the surface phase Mg2Si ((2/3)root 3x(2/3)root 3)-R30 degrees has been grown. The system has been probed by in situ surface sensitive techniques as AES, LEED and EELS.
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页码：215 / +
页数：2
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