Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

被引：31
|
作者：
Yue, Fangyu [1 ,2 ]
Wu, Jun [3 ]
Chu, Junhao [1 ,2 ]
机构：
[1] E China Normal Univ, Minist Educ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期
关键词：
D O I：
10.1063/1.2983655
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg(1-x)Cd(x)Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including V(Hg), As(Hg), V(Hg)-As(Hg) complex, and Te(Hg), two deep levels have been observed in as-grown with an ionization energy of similar to 77.0 and similar to 95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials. (C) 2008 American Institute of Physics.
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页数：3
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