Tomographic Characterization of Dislocations in Failure Regions of Broad Area InGaAs/AlGaAs Strained-Layer Single Quantum Well High Power Laser Diodes

被引：0
|
作者：
Foran, Brendan [1 ]
Ives, Neil [1 ]
Yeoh, Terence [1 ]
Brodie, Miles [1 ]
Sin, Yongkun [1 ]
Presser, Nathan [1 ]
Mason, Maribeth [1 ]
Moss, Steven C. [1 ]
机构：
[1] Aerosp Corp, El Segundo, CA 90245 USA
来源：
MICROSCOPY AND MICROANALYSIS | 2009年 / 15卷
关键词：
D O I：
10.1017/S143192760909789X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：598 / 599
页数：2
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