DC Performance analysis of AlGaN/GaN HFMT for future High power applications

被引：0

作者：

Pandit, Pratik P. ^{[1
]}

Arivazhagan, L. ^{[1
]}

Prajoon, P. ^{[1
]}

Rajkumar, J. S. ^{[1
]}

Ajayan, J. ^{[2
]}

Nirmal, D. ^{[1
]}

机构：

[1] Karunya Univ, Dept Elect & Commun Engn, Coimbatore, Tamil Nadu, India

[2] SNS Coll Technol, Coimbatore, Tamil Nadu, India

来源：

2018 4TH INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) | 2018年

关键词：

HEMT; Gallium Nitride; Drain current; ELECTRON-MOBILITY TRANSISTORS; HEMTS; GAN; RF;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we analyzed the DC performance of asymmetric A1GaN/GaN High Electron Mobility Transistors (HEMTs) on SiC substarte using SilvacoTCAD software. The highlights of the proposed HEMT are intrinsic GaN channel, A1N nucleation layer, A1GaN barrier layer and asymmetric gate technology and GaN cap layer. The Lg = 50 nm proposed HEMT on SiC substrate exhibits a gm_max of 170 mS/mm and IDS_max of 800 mA/mm and breakdown voltage of 550 V. The proposed HEMT on SiC substrate exhibits a threshold voltage of-5 V which indicates its D-Mode operation of the device. This excellent DC and breakdown characteristics of the proposed HEMT makes them an excellent candidate for future high power and high frequency applications.

引用

页码：313 / 318

页数：6

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