Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs

被引：0

作者：

Andrade, M. G. C. ^{[1
]}

Martino, J. A. ^{[1
]}

Aoulaiche, M. ^{[1
]}

Collaert, N. ^{[1
]}

Mercha, A. ^{[1
]}

Simoen, E. ^{[1
]}

Claeys, C. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

来源：

MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 | 2011年 / 39卷 / 01期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1149/1.3615200

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, the influence of proton irradiation is experimentally studied in triple gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance and Drain Induced Barrier Lowering (DIBL) will be compared in the DT mode and the standard biasing configuration. Moreover, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be studied. The results indicate that the DTMOS FinFET structure shows superior electrical characteristics and a better analog performance before and after irradiation.

引用

页码：247 / 254

页数：8

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