Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs

被引：0
|
作者：
Andrade, M. G. C. [1 ]
Martino, J. A. [1 ]
Aoulaiche, M. [1 ]
Collaert, N. [1 ]
Mercha, A. [1 ]
Simoen, E. [1 ]
Claeys, C. [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium
来源：
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 | 2011年 / 39卷 / 01期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1149/1.3615200
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper, the influence of proton irradiation is experimentally studied in triple gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance and Drain Induced Barrier Lowering (DIBL) will be compared in the DT mode and the standard biasing configuration. Moreover, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be studied. The results indicate that the DTMOS FinFET structure shows superior electrical characteristics and a better analog performance before and after irradiation.
引用
收藏
页码：247 / 254
页数：8
相关论文
共 50 条
  • [1] Behavior of triple-gate Bulk FinFETs with and without DTMOS operation
    Cano de Andrade, Maria Gloria
    Martino, Joao Antonio
    Aoulaiche, Marc
    Collaert, Nadine
    Simoen, Eddy
    Claeys, Cor
    SOLID-STATE ELECTRONICS, 2012, 71 : 63 - 68
  • [2] Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
    Cano de Andrade, Maria Gloria
    Martino, Joao Antonio
    Aoulaiche, Marc
    Collaert, Nadine
    Simoen, Eddy
    Claeys, Cor
    MICROELECTRONICS RELIABILITY, 2014, 54 (11) : 2349 - 2354
  • [3] Body effects in tri-gate bulk FinFETs for DTMOS
    Han, Jin-Woo
    Lee, Choong-Ho
    Park, Donggun
    Choi, Yang-Kyu
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 208 - +
  • [4] Analog Performance of Bulk and DTMOS Triple-Gate Devices
    Cano de Andrade, Maria Glria
    Martino, Joao Antonio
    MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010, 2010, 31 (01): : 67 - 74
  • [5] n-Channel Bulk and DTMOS FinFETs: Investigation of GIDL and Gate Leakage Currents
    Magan, Caio Malingre
    Martino, Joao Antonio
    Simoen, Eddy
    Claeys, Cor
    Cano de Andrade, Maria Gloria
    2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,
  • [6] SUPPRESSION OF CORNER EFFECTS IN TRIPLE-GATE BULK FINFETS
    Poljak, Mirko
    Jovanovic, Vladimir
    Suligoj, Tomislav
    EUROCON 2009: INTERNATIONAL IEEE CONFERENCE DEVOTED TO THE 150 ANNIVERSARY OF ALEXANDER S. POPOV, VOLS 1- 4, PROCEEDINGS, 2009, : 1219 - +
  • [7] Influence of Temperature on the Operation of Strained Triple-Gate FinFETs
    Pavanello, M. A.
    Martino, J. A.
    Simoen, E.
    Rooyackers, R.
    Collaert, N.
    Claeys, C.
    2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2008, : 55 - +
  • [8] Suppression of corner effects in wide-channel triple-gate bulk FinFETs
    Poljak, Mirko
    Jovanovic, Vladimir
    Suligoj, Tomislav
    MICROELECTRONIC ENGINEERING, 2010, 87 (02) : 192 - 199
  • [9] Analytical Modeling of Hot Carrier Injection Induced Degradation in Triple Gate Bulk FinFETs
    Ghobadi, Nayereh
    Afzali-Kusha, Ali
    Asl-Soleimani, Ebrahim
    2009 1ST ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2009, : 28 - 34
  • [10] Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI
    Andrade, M. G. C.
    Martino, J. A.
    Simoen, E.
    Claeys, C.
    MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2012, 2012, 49 (01): : 111 - 118
12345