Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4 x 4)α surface

被引：5

作者：

Murase, Isao ^{[1
]}

Akiyama, Toru ^{[1
]}

Nakamura, Kohji ^{[1
]}

Ito, Tomonori ^{[1
]}

机构：

[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷

关键词：

Computer simulation; Phase diagrams; Surface structure; Molecular beam epitaxy; Bismuth compounds; ADSORPTION-DESORPTION BEHAVIOR; SEMICONDUCTOR SURFACES; THEORETICAL APPROACH; GROWTH; STRESS; MODEL;

D O I：

10.1016/j.jcrysgro.2012.12.047

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The initial incorporation processes of bismuth on GaAs(001)-c(4 x 4) surface are investigated by using our ab initio-based approach taking chemical potentials in the gas phase into account. The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical potential demonstrate that the form of incorporated Bi depends on the growth conditions. The Ga-Bi dimer easily adsorbs on the missing dimer region of the c(4 x 4)alpha surface where as the Bi-Bi dimer adsorption occurs after the Ga-As dimer desorption on the surface with a Ga-Bi dimer. These results imply that the adsorption of Bi-Bi dimer accompanied with Ga-As dimer desorption is crucial for the growth process of GaAsBi on GaAs(001) substrates. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：21 / 24

页数：4

共 50 条

[31] Kinetics of MBE incorporation of As4 on the (001) GaAs surface
Galitsyn, YG
Moshchenko, SP
Suranov, AS
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 7-8 : 81 - 89
[32] RHEED study of c(4x4)->(2x4) transition on GaAs(001) surface
Alexeev, AN
Karpov, SY
Pogorelsky, YV
Sokolov, IA
JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 72 - 77
[33] Surface structure of GaAs(001)-c(4 x 4) studied by LEED intensity analysis
Nagashima, A
Nishimura, A
Kawakami, T
Yoshino, J
SURFACE SCIENCE, 2004, 564 (1-3) : 218 - 224
[34] Ga-As dimer structure for the GaAs(001)-c(4x4) surface
Ohtake, A
Nakamura, J
Koguchi, N
Natori, A
SURFACE SCIENCE, 2004, 566 : 58 - 62
[35] Pyrrole adsorption on GaAs(001)-c(4x4): The role of surface defects
Bruhn, Thomas
Fimland, Bjorn-Ove
Esser, Norbert
Vogt, Patrick
PHYSICAL REVIEW B, 2012, 85 (07)
[36] Atomic geometry and bonding on the GaAs(001)-beta 2(2x4) surface from ab initio pseudopotential calculations
Srivastava, GP
Jenkins, SJ
PHYSICAL REVIEW B, 1996, 53 (19): : 12589 - 12592
[37] Ab initio-based approach to elemental growth process on the InAs wetting layer grown on GaAs substrate
Ito, Tomonori
Ogasawara, Kosuke
Sugitani, Tatsuhiko
Akiyama, Toru
Nakamura, Kohji
JOURNAL OF CRYSTAL GROWTH, 2013, 362 : 2 - 5
[38] Virial Coefficients of Helium-4 from Ab initio-Based Molecular Models
Schultz, Andrew J.
Kofke, David A.
JOURNAL OF CHEMICAL AND ENGINEERING DATA, 2019, 64 (09): : 3742 - 3754
[39] Surface reaction of trisdimethylaminoarsenic on GaAs(001)-c(4 × 4) and (4 × 6)
Cui, Jie
Ozeki, Masashi
Ohashi, Masafumi
Applied Physics Letters, 1997, 71 (18):
[40] Asymmetric c(4x4)→γ(2x4) reconstruction phase transition on the (001)GaAs Surface
Galitsyn, Yu. G.
Dmitriev, D. V.
Mansurov, V. G.
Moshchenko, S. P.
Toropov, A. I.
JETP LETTERS, 2006, 84 (09) : 505 - 508

← 1 2 3 4 5 →