Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

被引：13
|
作者：
Zhuravlev, A. G. [1 ,2 ]
Alperovich, V. L. [1 ,2 ]
机构：
[1] Rzhanov Inst Semicond Phys, Pr Lavrentieva 13, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Pirogova 2, Novosibirsk 630090, Russia
来源：
APPLIED SURFACE SCIENCE | 2017年 / 395卷
关键词：
Solar energy conversion; Photoemission; Photon-enhanced thermionic emission; GaAs surface; Cesium; INTERFACE; CESIUM; ENERGY;
D O I：
10.1016/j.apsusc.2016.05.057
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 degrees C leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：3 / 8
页数：6
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