Efficiency of dislocation density reduction during heteroepitaxial growth of diamond for detector applications

被引：61

作者：

Stehl, C. ^{[1
]}

Fischer, M. ^{[1
]}

Gsell, S. ^{[1
]}

Berdermann, E. ^{[2
]}

Rahman, M. S. ^{[2
]}

Traeger, M. ^{[2
]}

Klein, O. ^{[1
]}

Schreck, M. ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[2] GSI Helmholtz Zentrum Schwerionenforsch, D-64291 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

BUFFER LAYERS; DEPOSITION; SILICON; IRIDIUM; ROUTE; FILMS;

D O I：

10.1063/1.4824330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The development of dislocation density and micro-strain in heteroepitaxial diamond films on iridium was measured over more than two decades of thickness up to d approximate to 1 mm. Simple mathematical scaling laws were derived for the decrease of dislocation density with increasing film thickness and for its correlation with micro-strain. The Raman line width as a measure of micro-strain showed a huge decrease to 1.86 cm(-1), close to the value of perfect single crystals. The charge collection properties of particle detectors built from this material yield efficiencies higher than 90% in the hole-drift mode, approaching the performance of homoepitaxial films. (C) 2013 AIP Publishing LLC.

引用

页数：4

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