Junction Behavior of CVD Deposited MoS2 Thin Film with Indium Electrodes

被引：0
|
作者：
Arora, Anmol [1 ]
Sharma, Kriti [2 ]
Tripathi, S. K. [1 ]
机构：
[1] Panjab Univ, Dept Phys, Ctr Adv Study Phys, Chandigarh 160014, India
[2] GGDSD Coll, Dept Phys, Sect 32-C, Chandigarh 160030, India
来源：
3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019) | 2020年 / 2220卷
关键词：
MONOLAYER MOS2; LAYER;
D O I：
10.1063/5.0001843
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-resistance and high quality contacts are necessary for utilizing the electronic applications of Transition Metal Dichalcogenides (TMDs). Earlier reported work on decreasing the contact resistance is mainly based on techniques those results in either oxidation or degradation of samples. So, achieving ohmic junction behavior of metal and semiconducting TMDs is the need of the hour to boost nanoelectronics. In this work, MoS2 thin films are synthesized using modified thermal chemical vapor deposition technique. Indium electrodes are deposited on these films and Indium-MoS2 junction is studied.
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页数：4
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