Full-zone k.p model for the electronic structure of unstrained GaAs1-xPx and strained AlxIn1-xAs alloys

被引：16
|
作者：
Neffati, R. [1 ]
Saidi, I. [1 ]
Boujdaria, K. [1 ]
机构：
[1] Univ Carthage, Fac Sci Bizerte, Lab Phys Mat Struct & Proprietes, Zarzouna 7021, Bizerte, Tunisia
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 05期
关键词：
ENERGY-BAND STRUCTURE; ASSEMBLED QUANTUM DOTS; SEMICONDUCTOR ALLOYS; CYCLOTRON RESONANCE; EFFECTIVE-MASS; VALENCE BANDS; P MODEL; CONDUCTION; GAAS; GAP;
D O I：
10.1063/1.4751353
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We analyze the electronic energy band structure of strained and unstrained III-V semiconductors alloys within full-zone k.p approach in order to reach a realistic and minimal k.p model, parametrized to provide an accurate description of both valence and conduction bands. We show that a 40-band k.p model is fairly sufficient to reproduce accurately the overall band structure, obviating the use of any fictitious s* orbital. As an application, the 40-level k.p model is used to describe the band offsets as well as the band parameters in the strained AlxIn1-xAs/AlyGa1-yAs system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751353]
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页数：12
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