Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice

被引：31
|
作者：
Sun, BQ
Wang, JN [1 ]
Ge, WK
Wang, YQ
Jiang, DS
Zhu, HJ
Wang, HL
Deng, YM
Feng, SL
机构：
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.60.8866
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the influence of a transverse magnetic field on the current-voltage characteristics of a doped GaAs/AlAs superlattice at 1.6 K. The current transport regimes-stable electric field domain formation and current selfoscillation-are observed with increasing transverse magnetic field up to 13 T. Magnetic-field-induced redistribution of electron momentum and energy is identified as the mechanism triggering the switching over of one process to another lending to a change in the dependence of the effective electron drift velocity on electric field. Simulation yields excellent agreement with observed results.
引用
收藏
页码：8866 / 8870
页数：5
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