Growth of III-nitride photonic structures on large area silicon substrates

被引：54
|
作者：
Li, J
Lin, JY
Jiang, HX
机构：
[1] III N Technol Inc, Manhattan, KS 66502 USA
[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 17期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2199492
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the growth of high quality aluminum nitride (AlN) and gallium nitride (GaN) epilayers on large area (6 in. diameter) silicon (111) substrates by metal organic chemical vapor deposition. We have demonstrated the feasibility of growing crack-free high quality III-nitride photonic structures and devices on 6 inch Si substrates through the fabrication of blue light emitting diodes based upon nitride multiple quantum wells with high performance. The demonstration further enhances the prospects for achieving photonic integrated circuits based upon nitride-on-Si material system. (c) 2006 American Institute of Physics.
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页数：3
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