Study on channel depletion in metal-oxide-semiconductor field effect transistor using top-view imaging through scanning capacitance microscopy

被引：1

作者：

Naitou, Y. ^{[1
]}

Ogiso, H. ^{[2
]}

Kamohara, S. ^{[3
]}

Yano, F. ^{[3
]}

Nishida, A. ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Mfg Res Inst, Tsukuba, Ibaraki 3058564, Japan

[3] MIRAI Semicond Leading Edge Technol Selete Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2009年 / 41卷 / 01期

关键词：

scanning probe microscopy; scanning capacitance microscopy; metal-oxide-semiconductor field-effect transistors; carrier depletion; RESOLUTION; PROFILES;

D O I：

10.1002/sia.2971

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Carrier profiles within the near-surface channel region of n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs) have been examined using scanning capacitance microscopy (SCM). After the removal of a poly-Si gate electrode, we were able to assess the qualitative local carrier concentration within specified regions of an n-MOSFET using static capacitance (dC/dZ) measurement with its bias dependence (dC/dZ-V spectra). We found that the dC/dZ-signal at the center of the channel region lowers as the gate length is reduced. This result is attributed to the carrier depletion within the channel, which is consistent with the threshold voltage (V-th) characteristics of the device properties. Copyright (C) 2008 John Wiley & Sons, Ltd.

引用

页码：34 / 37

页数：4

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