Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

被引：24

作者：

Kukli, Kaupo ^{[1
]}

Kemell, Marianna ^{[1
]}

Koykka, Joel ^{[1
]}

Mizohata, Kenichiro ^{[2
]}

Vehkamaki, Marko ^{[1
]}

Ritala, Mikko ^{[1
]}

Leskela, Markku ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland

[2] Univ Helsinki, Dept Phys, Accelerator Lab, FI-00014 Helsinki, Finland

来源：

THIN SOLID FILMS | 2015年 / 589卷

基金：

芬兰科学院;

关键词：

Atomic layer deposition; Zirconium oxide; Dielectrics; Metal oxides; Crystal growth; KAPPA GATE DIELECTRICS; ZRO2; THIN-FILMS; ELECTRICAL-PROPERTIES; LOW-TEMPERATURE; OXIDE; IMPACT; TIO2; PERFORMANCE; DEFECTS;

D O I：

10.1016/j.tsf.2015.06.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZrO2 films were grown by atomic layer deposition using ZrCl4 and O-3 as precursors. The films were grown on silicon substrates in the temperature range of 220-500 degrees C. The ALD rate was monotonously decreasing from 0.085 to 0.060 nm/cycle in this temperature range towards the highest temperatures studied. The content of chlorine in the films did not exceed 0.2 at.% as measured by elastic recoil detection analysis. The content of hydrogen was 0.30 and 0.14 at.% in the films grown at 300 and 400 degrees C, respectively. Structural studies revealed the films consisting of mixtures of stable monoclinic and metastable tetragonal/cubic polymorphs of ZrO2, and dominantly metastable phases of ZrO2 below and above 300 degrees C, respectively. Permittivity of dielectric layers in Al/Ti/ZrO2/(TiN/)Si capacitors with 15-40 nm thick ZrO2 ranged between 12 and 25 at 100 kHz and the dielectric breakdown fields were in the range of 1.5-3.0 MV/cm. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：597 / 604

页数：8

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