An origin of orange (2 eV) photoluminescence in SiO2 films implanted with high Si+-ion doses

The photoluminescence and photoluminescence excitation spectra of SiO2 films implanted with high (3 at %) Si+-ion doses are studied in relation to the temperature of postimplantation annealing. It is shown that two photoluminescence bands with peaks at 2.7 and 2 eV are dominant in the spectra. As the annealing temperature is increased, the relation between the intensities of the 2.7 and 2 eV bands changes in favor of the former one. Both of the photoluminescence bands have their main excitation peak at the energy 5.1 eV. The excitation spectrum of the similar to 2-eV band exhibits also peaks at 3.8 and 4.6 eV. It is concluded that, in the implanted SiO2 films, the orange photoluminescence band originates from radiative transitions between levels of centers associated with a deficiency of oxygen (a parts per thousand Si-Sia parts per thousand or =Si:) and the levels of nonbridging oxygen (a parts per thousand Si-OaEuro cent).