Analysis of thermal activation energy for poly-Si TFTs

被引：0

作者：

Chiu, Chao-Chian ^{[1
]}

Zan, Hsiao-Wen ^{[1
]}

Shaw, Er-Kang ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

来源：

IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conduction behavior of Poly-Si TFTs had been carefully studied by analyzing their activation energy under different bias condition. It is found that the trapping effects dominate grain boundary barrier under small drain bias, while the DIGBL effect was pronounced under high drain bias. Considering both the trapping effects and the DIGBL effects, a new activation energy model has been proposed and verified. The cut-off region activation energy of devices with or without LDD structure was also compared in this paper. The influence of gate bias on leakage current was examined by device simulation results.

引用

页码：533 / 536

页数：4

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