Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sot-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300 degrees C and an annealing temperature of 700 degrees C, the MgAl2O4 films with 9 mu m thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.