Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

被引：0
|
作者：
Tseng, Ching-Fang [1 ]
Hsu, Cheng-Hsing [1 ]
Lai, Chun-Hung [1 ]
机构：
[1] Natl United Univ, Dept Elect Engn, Kung Ching Li 36003, Miao Li, Taiwan
来源：
NEW TRENDS IN MECHATRONICS AND MATERIALS ENGINEERING | 2012年 / 151卷
关键词：
Sol-Gel Method; Dielectric Properties; MgAl2O4 thin films; HIGH-QUALITY; GROWTH;
D O I：
10.4028/www.scientific.net/AMM.151.314
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sot-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300 degrees C and an annealing temperature of 700 degrees C, the MgAl2O4 films with 9 mu m thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.
引用
收藏
页码：314 / 318
页数：5
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