Optical and micro-structural properties of ZnO thin films grown on silicon substrate by pulsed laser deposition

被引：0
|
作者：
He, JT [1 ]
Zhuang, HZ [1 ]
Xue, CS [1 ]
Tian, DS [1 ]
Wu, YX [1 ]
Xue, SB [1 ]
Hu, HJ [1 ]
机构：
[1] Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China
来源：
JOURNAL OF RARE EARTHS | 2006年 / 24卷
关键词：
PLD; ZnO; substrate temperature; oxygen pressure;
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd:YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 degrees C in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.
引用
收藏
页码：26 / 28
页数：3
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