Effect of sol-gel precursors on the grain structure of PZT thin films

被引:17
|
作者
Kwon, YT
Lee, IM
Lee, WI [1 ]
Kim, CJ
Yoo, IK
机构
[1] Inha Univ, Inha Res Inst Semicond & Thin Film Technol, Dept Chem, Inchon 402751, South Korea
[2] Samsung Adv Inst Technol, Mat & Device Res Ctr, Suwon 440600, Kyungki, South Korea
关键词
thin films; sol-gel chemistry; thermogravimetric analysis (TGA); ferroelectricity;
D O I
10.1016/S0025-5408(99)00068-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three sol-gel solutions, namely, acetate-, 2-methoxyethoxide-, and 2-ethylhexanoate-based precursor solutions, were synthesized and utilized for the fabrication of ferroelectric lead zirconate titanate (PZT) thin films on Pt/Ti/SiO2/Si substrates. The effect of these sol-gel precursors on the surface morphology, crystallographic phase, and ferroelectric properties of the PZT thin films is analyzed in this work. The PZT thin films prepared from the acetate-based precursor solution demonstrated homogeneous and dense grains, while those from the 2-methoxyethoxide and 2-ethylhexanoate systems exhibited large rosette structures on their surface. The correlation between the decomposition mechanism of the precursor and the formation of rosette structure in the sol-gel derived PZT films is discussed. (C) 1999 Elsevier Science Ltd.
引用
收藏
页码:749 / 760
页数:12
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