Effect of sol-gel precursors on the grain structure of PZT thin films

被引:17
|
作者
Kwon, YT
Lee, IM
Lee, WI [1 ]
Kim, CJ
Yoo, IK
机构
[1] Inha Univ, Inha Res Inst Semicond & Thin Film Technol, Dept Chem, Inchon 402751, South Korea
[2] Samsung Adv Inst Technol, Mat & Device Res Ctr, Suwon 440600, Kyungki, South Korea
关键词
thin films; sol-gel chemistry; thermogravimetric analysis (TGA); ferroelectricity;
D O I
10.1016/S0025-5408(99)00068-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three sol-gel solutions, namely, acetate-, 2-methoxyethoxide-, and 2-ethylhexanoate-based precursor solutions, were synthesized and utilized for the fabrication of ferroelectric lead zirconate titanate (PZT) thin films on Pt/Ti/SiO2/Si substrates. The effect of these sol-gel precursors on the surface morphology, crystallographic phase, and ferroelectric properties of the PZT thin films is analyzed in this work. The PZT thin films prepared from the acetate-based precursor solution demonstrated homogeneous and dense grains, while those from the 2-methoxyethoxide and 2-ethylhexanoate systems exhibited large rosette structures on their surface. The correlation between the decomposition mechanism of the precursor and the formation of rosette structure in the sol-gel derived PZT films is discussed. (C) 1999 Elsevier Science Ltd.
引用
收藏
页码:749 / 760
页数:12
相关论文
共 50 条
  • [1] Influence of different lead precursors on the microstructure and properties of sol-gel PZT thin films
    Kosec, M
    Delalut, U
    Malic, B
    Bobnar, V
    Drazic, G
    ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 443 - 445
  • [2] The effect of thermal annealings of PZT thin films prepared by sol-gel
    Bae, MH
    Park, HW
    Lim, KJ
    Lee, JS
    Choi, WJ
    No, K
    FERROELECTRICS, 2002, 271 : 1783 - 1788
  • [3] Ferroelectric PZT thin films by sol-gel deposition
    Reaney, IM
    Taylor, DV
    Brooks, KG
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1998, 13 (1-3) : 813 - 820
  • [4] Structural characterisation of sol-gel PZT thin films
    Impey, SA
    Huang, Z
    Patel, A
    Watton, R
    Whatmore, RW
    ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 439 - 442
  • [5] Ferroelectric PZT Thin Films by Sol-Gel Deposition
    Ian M. Reaney
    David V. Taylor
    Keith G. Brooks
    Journal of Sol-Gel Science and Technology, 1998, 13 : 813 - 820
  • [6] Phase transformations in sol-gel PZT thin films
    Eakin, DP
    Norton, MG
    Bahr, DF
    MATERIALS SCIENCE OF NOVEL OXIDE-BASED ELECTRONICS, 2000, 623 : 185 - 190
  • [7] Sol-gel derived la modified PZT thin films: Structure and properties
    Singh, R
    Chandra, S
    Sharma, S
    Tripathi, AK
    Goel, TC
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2004, 11 (02) : 264 - 270
  • [8] Effect of Reactants on the Electrical Properties of Sol-Gel Derived PZT Thin Films
    Lu, Hsin-Chun
    Wu, Chun-Hsien
    Chou, Shean-Dar
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 501 - 502
  • [9] Effect of rare earth doping on sol-gel derived PZT thin films
    Majumder, SB
    Dobal, PS
    Roy, B
    Bhaskar, S
    Katiyar, RS
    FERROELECTRICS LETTERS SECTION, 2001, 28 (3-4) : 85 - 92
  • [10] Effect of Lanthanum Doping on Leakage Currents of Sol-Gel PZT Thin Films
    Kotova, N.
    Podgorny, Yu.
    Seregin, D.
    Sigov, A.
    Vishnevskiy, A.
    Vorotilov, K.
    FERROELECTRICS, 2014, 465 (01) : 54 - 59