Porous Structure Formation on Silicon Surface Treated by Plasma Focus Device

被引：15

作者：

Ahmad, M. ^{[1
]}

Al-Hawat, Sh ^{[2
]}

Akel, M. ^{[2
]}

机构：

[1] Atom Energy Commiss Syria, Dept Chem, IBA Lab, Damascus, Syria

[2] Atom Energy Commiss Syria, Dept Phys, Damascus, Syria

来源：

JOURNAL OF FUSION ENERGY | 2013年 / 32卷 / 04期

关键词：

Plasma focus; Porous silicon; Pores formation; Micropores; Nanopores; SEM; RBS; X-RAY-EMISSION; ION-BEAM; FARADAY CUP; THIN-FILMS; DEPOSITION; IMPLANTATION; IRRADIATION; ALUMINUM; TITANIUM; SUBSTRATE;

D O I：

10.1007/s10894-013-9596-y

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Pores formation has been observed on silicon surface, induced by plasma focus treatment. The scanning electron microscope observation shows the presence of different pores sizes which scale from micro to nano dimensions. A spacial dependency of pores distribution according to pore sizes is revealed. This distribution is reproducible. The relative nano/micro pores formation is dependent of the experimental conditions (distance from anode and number of shots). The dynamic of pores formation and reason of pores distribution is discussed suggesting the implication of liquid-phase process. The ablated copper from the anode is deposited in noticeable amount on the silicon surface. The lateral distribution and diffusion of copper are investigated using Rutherford Backscattering spectroscopy technique.

引用

页码：471 / 478

页数：8

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