An approach to quantitative compositional profiling at near-atomic resolution using high-angle annular dark field imaging

被引：60
|
作者：
Anderson, SC
Birkeland, CR
Anstis, GR
Cockayne, DJH
机构：
[1] UNIV SYDNEY,AUSTRALIAN KEY CTR MICROSCOPY & MICROANAL,SYDNEY,NSW 2006,AUSTRALIA
[2] NORWEGIAN UNIV SCI & TECHNOL,DEPT PHYS,N-7034 TRONDHEIM,NORWAY
[3] UNIV TECHNOL SYDNEY,DEPT APPL PHYS,SYDNEY,NSW 2007,AUSTRALIA
来源：
ULTRAMICROSCOPY | 1997年 / 69卷 / 02期
关键词：
scanning transmission electron microscopy (STEM);
D O I：
10.1016/S0304-3991(97)00041-7
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
The compositional profile of a GaAs/Al0.6Ga0.4As interface is investigated through analysis of a high resolution high-angle annular dark field image. Image calculations are carried out using a multislice code that incorporates thermal diffuse scattering, and an algorithm is developed for quantitative matching between these images and the experimental image. The resulting compositional profile (with monolayer spatial resolution) is compared with an analogous quantitative chemical mapping experiment. The extension of this new technique to high resolution compositional mapping (in two dimensions) is briefly explored.
引用
收藏
页码：83 / 103
页数：21
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