2D irregular structure patterning and analysis of LED by NSOM

被引：0
|
作者：
Pudis, D. [1 ]
Kubicova, I. [1 ]
Skriniarova, J. [2 ]
Kovac, J. [2 ]
Jakabovic, J. [2 ]
Novak, J. [3 ]
Suslik, L. [2 ]
Hascik, S. [3 ]
机构：
[1] Univ Zilina, Dept Phys, 1 Univ, Zilina 01026, Slovakia
[2] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, Slovakia
[3] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年
关键词：
LIGHT-EMITTING-DIODES; PHOTONIC CRYSTALS; LITHOGRAPHY; ENHANCEMENT; EXTRACTION; EXPOSURE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This contribution presents possibilities of near-field scanning optical microscope (NSOM) in two different modes as an effective tool for semiconductor device surface patterning and for high-resolution microscopy. The illumination mode of the NSOM is used in lithography application to pattern two-dimensional irregular structure in the emitting surface of GaAs/AlGaAs-based light emitting diode (LED). The structure was patterned in the upper confinement AlGaAs layer and the enhancement of radiation from the patterned surface was proven by NSOM in collection mode.
引用
收藏
页码：167 / 170
页数：4
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