Subsurface measurement of nanostructures on GaAs by electrostatic force microscopy

被引：2
|
作者：
Yamada, Fumihiko [1 ]
Kamiya, Itaru [1 ]
机构：
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源：
APPLIED SURFACE SCIENCE | 2013年 / 271卷
基金：
日本学术振兴会;
关键词：
Scanning probe microscopy; Electro static force microscopy; III-V semiconductor; Surface oxide; NANOCRYSTALS; TIP;
D O I：
10.1016/j.apsusc.2013.01.146
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The size of surface buried oxide nanostructures are measured by electrostatic force microscopy (EFM). In contrast to atomic force microscopy that cannot probe subsurface structures and thickness, we show that EFM data include information about the thickness of individual nanostructures, consequently allowing us to determine the thickness of buried nanostructures on semiconductor substrates. We further show that this measurement can be performed simultaneously with AFM using EFM modulation spectroscopy. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：131 / 135
页数：5
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