Spatial profile of the charge storage in the pentacene-based field-effect transistor nonvolatile memories using poly(2-vinyl naphthalene) electret is probed. The electron trapping into the electret after programming can be space dependent with more electron storage in the region closer to the contacts, and reducing the channel length is an effective approach to improve the memory performance. The deficient electron supply in pentacene is proposed to be responsible for the inhomogeneous electron storage in the electret. The hole trapping into the electret after erasing is spatially homogeneous, arising from the sufficient hole accumulation in the pentacene channel. (C) 2013 AIP Publishing LLC.
WANG Hong PENG YingQuan JI ZhuoYu LIU Ming SHANG LiWei LIU XingHua School of Physics Science and TechnologyLanzhou UniversityLanzhou China Laboratory of Nanofabrication and Novel Device IntegrationInstitute of MicroelectronicsChinese Academy of SciencesBeijing China
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WANG Hong PENG YingQuan JI ZhuoYu LIU Ming SHANG LiWei LIU XingHua School of Physics Science and TechnologyLanzhou UniversityLanzhou China Laboratory of Nanofabrication and Novel Device IntegrationInstitute of MicroelectronicsChinese Academy of SciencesBeijing China