Effect of bias application to plasma density in weakly magnetized inductively coupled plasma

被引:4
|
作者
Kim, Hyuk [1 ]
Lee, Woohyun [1 ]
Park, Wanjae [1 ]
Whang, Ki-Woong [1 ]
机构
[1] Seoul Natl Univ, Plasma Lab, Dept Elect Engn & Comp Sci, Seoul 151742, South Korea
来源
关键词
DISCHARGE; ENERGY; PROBE; FIELD;
D O I
10.1116/1.4804136
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Independent control of the ion flux and energy can be achieved in a dual frequency inductively coupled plasma (ICP) system. Typically, the plasma density is controlled by the high-frequency antenna radio-frequency (RF) power and the ion energy is controlled by the low-frequency bias RF power. Increasing the bias power has been known to cause a decrease in the plasma density in capacitively coupled discharge systems as well as in ICP systems. However, an applied axial magnetic field was found to sustain or increase the plasma density as bias power is increased. Measurements show higher electron temperatures but lower plasma densities are obtained in ordinary ICP systems than in magnetized ICP systems under the same neutral gas pressure and RF power levels. Explanations for the difference in the behavior of plasma density with increasing bias power are given in terms of the difference in the heating mechanism in ordinary unmagnetized and magnetized ICP systems. (C) 2013 American Vacuum Society.
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页数:5
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