Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulator-semiconductor capacitor through AlN thermal stress

被引：1

作者：

Kao, Min-Lu ^{[1
]}

Lin, Yuan ^{[1
]}

Weng, You-Chen ^{[2
]}

Dee, Chang-Fu ^{[3
]}

Chang, Edward Yi ^{[1
,4
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Coll Photon, Tainan 71150, Taiwan

[3] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Level 4,Res Complex, Bangi 43600, Malaysia

[4] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

来源：

MATERIALS RESEARCH EXPRESS | 2022年 / 9卷 / 10期

关键词：

ferroelectric-Like; MOCVD; AlN; MIS capacitor; NUCLEATION LAYER; GAN; TEMPERATURE; ALUMINUM;

D O I：

10.1088/2053-1591/ac99c0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By modulating the thermal stress during film growth, the strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by metal organic chemical vapor phase deposition (MOCVD) on silicon (Si) (111) substrate. The capacitors with strained AlN were fabricated and experimentally demonstrated, the linear to ferroelectric-like behavior on the fabricated AlN capacitors was observed, and the behavior was explained in terms of residual strains in the film. This work reports the ferroelectric-like properties of AlN film grown under specific deposition conditions for the first time.

引用

页数：7

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