A Laser Beam for Boosting the Power Added Efficiency of an X-Band GaN MMIC Amplifier

被引：0
|
作者：
Caddemi, A. [1 ]
Cardillo, E. [1 ]
机构：
[1] Univ Messina, Dept Engn, I-98166 Messina, Italy
来源：
2019 14TH INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES, SYSTEMS AND SERVICES IN TELECOMMUNICATIONS (TELSIKS 2019) | 2019年
关键词：
GaN amplifier; HEMT optical behavior; laser; light exposure; power added efficiency; PAE; ULTRAVIOLET PHOTODETECTORS;
D O I：
10.1109/telsiks46999.2019.9002114
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with a new method for improving the power added efficiency of an amplifier by exploiting a blue-ray laser beam. The active device of the tested amplifier is an AlGaN/GaN HEMT on SiC whose dc performance has been prior analyzed with and without applying the laser beam. Thereafter, the effect of the optical radiation on the power added efficiency of the amplifier has been investigated and the relevant results have been reported. This contribution follows an intense experimental activity of the authors in this field and points out this beneficial feature of the optical radiation.
引用
收藏
页码：307 / 310
页数：4
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