Chemical and morphological properties of (Ti-Zr)N thin films grown in an arc pulsed system

被引：5
|
作者：
Trujillo, O. A. [1 ]
Castillo, H. A. [1 ]
Agudelo, L. C. [1 ]
Devia, A. [1 ]
机构：
[1] Univ Nacl Colombia, Lab Fis Plasma, Manizales, Colombia
来源：
MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 11期
关键词：
(Ti-Zr)N; XPS; SPM; Arc pulsed;
D O I：
10.1016/j.mejo.2008.01.067
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Due to its extensive field of application in different areas. including mechanics, electronics, tribology and optics the last decade has seen a large interest the study of titanium-zirconium-nitride (Ti-Zr)N thin films grown by different techniques. We had produced (Ti-Zr)N thin films and in this work chemical. morphological and electronics analysis are presented. Thin films were produced by the PAPVD (plasma assisted physics vapor deposition) technique. by pulsed arc ill a mono-vaporizer system using a tit titanium-zirconium target With 99.99% purity. Argon-nitrogen mixture for the discharge Was used. For the analyses X-ray photoelectron spectroscopy (XPS) and scanning probe microscopy (SPM) techniques were used. XPS results shown the chemical composition of the films. Films were morphologically and tribologically characterized using SPM, obtaining grain size and friction coefficient. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1379 / 1381
页数：3
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