Single-Layer MoS2 Mechanical Resonant Piezo-Sensors with High Mass Sensitivity

被引:50
|
作者
Jiang, Chengming [2 ]
Li, Qikun [2 ]
Huang, Jijie [1 ]
Bi, Sheng [2 ]
Ji, Ruonan [3 ]
Guo, Qinglei [4 ]
机构
[1] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[2] Dalian Univ Technol, Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116024, Peoples R China
[3] Northwestern Polytech Univ, Dept Phys, Xian 710072, Peoples R China
[4] Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
基金
中国国家自然科学基金;
关键词
MoS2; mass sensor; resonator; piezo-electric; small mass; GRAPHENE; DNA; PIEZOELECTRICITY; PROBE;
D O I
10.1021/acsami.0c11913
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin-film resonators and scanning probe microscopies (SPM) are usually used on low-frequency mechanical systems at the nanoscale or larger. Generally, off-chip approaches are applied to detect mechanical vibrations in these systems, but these methods are not much appropriate for atomic-thin-layer devices with ultrahigh characteristic frequencies and ultrathin thickness. Primarily, those mechanical devices based on atomic-layers provide highly improved properties, which are inapproachable with conventional nanoelectromechanical systems (NEMS). In this report, the assembly and manipulation of single-atomic-layer piezo-resonators as mass sensors with eigen mechanical resonances up to gigahertz are described. The resonators utilize electronic vibration transducers based on piezo-electric polarization charges, allowing direct and optimal atomic-layer sensor exports. This direct detection affords practical applications with the previously inapproachable Q-factor and sensitivity rather than photoelectric conversion. Exploration of a 2406.26 MHz membrane vibration is indicated with a thermo-noise-limited mass resolution of similar to 3.0 zg (10(-21) g) in room temperature. The fabricated mass sensors are contactless and fast and can afford a method for precision measurements of the ultrasmall mass with two-dimentional materials.
引用
收藏
页码:41991 / 41998
页数:8
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