A Study of phase defect measurement on EUV mask by multiple detectors CD-SEM

被引:10
|
作者
Yonekura, Isao [1 ]
Hakii, Hidemitsu [1 ]
Morisaki, Shinya [1 ]
Murakawa, Tsutomu
Shida, Soichi
Kuribara, Masayuki
Iwai, Toshimichi
Matsumoto, Jun
Nakamura, Takayuki
机构
[1] Toppan Printing Co Ltd, Business Dev Res Lab, Sugito, Saitama 3458508, Japan
关键词
phase defects; EUV; MVM-SEM; 3D measurement; multilayer;
D O I
10.1117/12.2031846
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have studied MVM (Multi Vision Metrology) -SEM (R) E3630 to measure 3D shape of defects. The four detectors (Detector A, B, C and D) are independently set up in symmetry for the primary electron beam axis. Signal processing of four direction images enables not only 2D (width) measurement but also 3D (height) measurement. At last PMJ, we have investigated the relation between the E3630's signal of programmed defect on MoSi-HT and defect height measured by AFM (Atomic Force Microscope). [1] It was confirmed that height of integral profile by this tool is correlated with AFM. It was tested that E3630 has capability of observing multilayer defect on EUV. We have investigated correlation with AFM of width and depth or height of multilayer defect. As the result of observing programmed defects, it was confirmed that measurement result by E3630 is well correlated with AFM. And the function of 3D view image enables to show nm order defect.
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页数:9
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