Intersubband lasing in silicon-based multiple quantum wells

被引：0
|
作者：
Sun, G [1 ]
Khurgin, JB [1 ]
Friedman, L [1 ]
Soref, RA [1 ]
机构：
[1] UNIV MASSACHUSETTS,DEPT PHYS,ENGN PROGRAM,BOSTON,MA 02125
来源：
SEMICONDUCTOR LASERS II | 1996年 / 2886卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：198 / 204
页数：7
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