Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

被引：40

作者：

Soylu, M. ^{[1
]}

Al-Ghamdi, Ahmed A. ^{[2
]}

Yakuphanoglu, F. ^{[3
]}

机构：

[1] Bingol Univ, Fac Arts & Sci, Dept Phys, Bingol, Turkey

[2] King Abdulaziz Univ, Dept Phys, Fac Sci, Jeddah 21589, Saudi Arabia

[3] Firat Univ, Dept Phys, Fac Sci, TR-23169 Elazig, Turkey

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2015年 / 85卷

关键词：

Optical materials; Sol-gel growth; Electrical properties; CDO THIN-FILMS; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; OXIDE; SPECTROSCOPY; CONSTANTS; LAYER; CONDUCTIVITY; TRANSISTORS; TRANSPORT;

D O I：

10.1016/j.jpcs.2015.04.015

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Undoped CdO films were prepared by sol-gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current-voltage (I-V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I-F/I-R value as high as 1.17 x 10(3) at 2 V, low leakage current of 4.88 x 10(-6) A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50-70% from 500 nm to 800 nm wavelength range. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：26 / 33

页数：8

共 50 条

[31] Electron beam induced current profiling of the p-ZnO:N/n-GaN heterojunction
Przezdziecka, E.
Stachowicz, M.
Chusnutdinow, S.
Jakiela, R.
Kozanecki, A.
APPLIED PHYSICS LETTERS, 2015, 106 (06)
[32] Realization of highly transparent conducting CdO thin films by RF Magnetron sputtering for Optoelectronic applications
Cheemadan, Saheer
Amiruddin, R.
Kumar, M. C. Santhosh
NANOSTRUCTURED THIN FILMS VIII, 2015, 9558
[33] Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces
G. V. Benemanskaya
G. E. Frank-Kamentskaya
N. M. Shmidt
M. S. Dunaevskiĭ
Journal of Experimental and Theoretical Physics, 2006, 103 : 441 - 448
[34] Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0001) surface
Benemanskaya, G. V.
Lapushkin, M. N.
Timoshnev, S. N.
SURFACE SCIENCE, 2009, 603 (16) : 2474 - 2478
[35] Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces
Benemanskaya, G. V.
Frank-Kamentskaya, G. E.
Shmidt, N. M.
Dunaevskii, M. S.
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2006, 103 (03) : 441 - 448
[36] Changes in Surface Morphology and Photoluminescence Spectrum during Photoelectrochemical Etching of (0001) n-GaN on Sapphire
Saito, Yasuhiro
Kobayashi, Naoki
Yamamoto, Jun
Ban, Yuzaburo
Matsumoto, Koh
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2010, 8 : 392 - 394
[37] Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes
Du, Guo-Tong.
Zhao, Wang
Wu, Guo-Guang
Shi, Zhi-Feng
Xia, Xiao-Chuan
Liu, Yang
Liang, Hong-Wei
Dong, Xin
Ma, Yan
Zhang, Bao-Lin
APPLIED PHYSICS LETTERS, 2012, 101 (05)
[38] Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes
Li, Lunjuan
Huang, Jian
Yang, Weichuan
Tang, Ke
Ren, Bing
Xu, Haitao
Wang, Linjun
SURFACE & COATINGS TECHNOLOGY, 2016, 307 : 1024 - 1028
[39] Fabrication and investigation of UV photodiode based on n-GaN/p-NiO heterojunction
Kazakin, A. N.
Enns, Ya. B.
Uvarov, A. V.
Nikitina, E. V.
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2022, 15 (03): : 145 - 149
[40] Electrochemistry and photoetching of n-GaN
Huygens, IM
Strubbe, K
Gomes, WP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) : 1797 - 1802

← 1 2 3 4 5 →