Mid-infrared photodetectors based on quaternary InAsSbP nanostructures

被引：0
|
作者：
Aroutiounian, V. M. [1 ]
Gambaryan, K. M. [1 ]
Harutyunyan, V. G. [1 ]
Harutyunyan, I. G. [1 ]
Kazaryan, M. S. [1 ]
机构：
[1] Yerevan State Univ, Yerevan 375049, Armenia
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2012年 / 47卷 / 03期
关键词：
InAsSbP nanostructures; quantum dots; infrared photodetectors; capacitance; QUANTUM DOTS; INFRARED DETECTORS;
D O I：
10.3103/S106833721203005X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Quaternary InAsSbP quantum dots (QD) with the surface concentration of (3-5)x10(9) cm(-2) have been grown on the InAs(100) substrate by the modified version of liquid-phase epitaxy. Morphology and distribution of densities of QDs were studied by means of atomic-force microscope. Diameter distribution of QDs was revealed to be Gaussian. The mean value of QD diameter is 23.1 nm with the variance of 6.9 nm. Two types of infrared photodetectors (IRPD) on the basis of InAs(100), with and without InAsSbP-QDs on the substrate surface, were fabricated and studied. Spectra of photoresponse of both types of IRPD at room temperature were measured and analyzed and a red shift was revealed for structures with QDs. Capacitance characteristics of IRPD and relative change in their surface resistance after irradiation with cw He-Ne laser have been studied.
引用
收藏
页码：128 / 132
页数：5
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