Mid-infrared photodetectors based on quaternary InAsSbP nanostructures

被引：0
|
作者：
Aroutiounian, V. M. [1 ]
Gambaryan, K. M. [1 ]
Harutyunyan, V. G. [1 ]
Harutyunyan, I. G. [1 ]
Kazaryan, M. S. [1 ]
机构：
[1] Yerevan State Univ, Yerevan 375049, Armenia
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2012年 / 47卷 / 03期
关键词：
InAsSbP nanostructures; quantum dots; infrared photodetectors; capacitance; QUANTUM DOTS; INFRARED DETECTORS;
D O I：
10.3103/S106833721203005X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Quaternary InAsSbP quantum dots (QD) with the surface concentration of (3-5)x10(9) cm(-2) have been grown on the InAs(100) substrate by the modified version of liquid-phase epitaxy. Morphology and distribution of densities of QDs were studied by means of atomic-force microscope. Diameter distribution of QDs was revealed to be Gaussian. The mean value of QD diameter is 23.1 nm with the variance of 6.9 nm. Two types of infrared photodetectors (IRPD) on the basis of InAs(100), with and without InAsSbP-QDs on the substrate surface, were fabricated and studied. Spectra of photoresponse of both types of IRPD at room temperature were measured and analyzed and a red shift was revealed for structures with QDs. Capacitance characteristics of IRPD and relative change in their surface resistance after irradiation with cw He-Ne laser have been studied.
引用
收藏
页码：128 / 132
页数：5
相关论文
共 50 条
  • [1] Mid-infrared photodetectors based on quaternary InAsSbP nanostructures
    V. M. Aroutiounian
    K. M. Gambaryan
    V. G. Harutyunyan
    I. G. Harutyunyan
    M. S. Kazaryan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2012, 47 : 128 - 132
  • [2] GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
    Shellenbarger, Z
    Mauk, M
    Cox, J
    South, J
    Lesko, J
    Sims, P
    DiNetta, L
    INFRARED DETECTORS AND FOCAL PLANE ARRAYS V, 1998, 3379 : 354 - 360
  • [3] GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
    Shellenbarger, ZA
    Mauk, MG
    Gottfried, MI
    Lesko, JD
    DiNetta, LC
    PHOTODETECTORS: MATERIALS AND DEVICES II, 1997, 2999 : 25 - 33
  • [4] Progress on GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
    Shellenbarger, ZA
    Mauk, MG
    Sims, PE
    Cox, JA
    Lesko, JD
    Bower, JR
    South, JD
    Dinetta, LC
    INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 135 - 140
  • [5] Development and characterization of GaInAsSb and InAsSbP mid-infrared photodetectors
    Mauk, M
    Shellenbarger, Z
    Cox, J
    Sims, P
    Lesko, J
    Barnett, AM
    ICM'99: ELEVENTH INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, 1999, : 31 - 34
  • [6] Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots
    V. G. Harutyunyan
    K. M. Gambaryan
    V. M. Aroutiounian
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2017, 52 : 43 - 48
  • [7] Narrow Bandgap Mid-Infrared Photodetectors Based on InAsSbP Quantum Dots
    Harutyunyan, V. G.
    Gambaryan, K. M.
    Aroutiounian, V. M.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2017, 52 (01) : 43 - 48
  • [8] Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
    Shellenbarger, Z
    Mauk, M
    Cox, J
    South, J
    Lesko, J
    Sims, P
    Jhabvala, M
    Fortin, MK
    PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 : 138 - 145
  • [9] Investigation of InAsSbP quantum dot mid-infrared sensors
    Harutyunyan, V. G.
    Gambaryan, K. M.
    Aroutiounian, V. M.
    Harutyunyan, I. G.
    JOURNAL OF SENSORS AND SENSOR SYSTEMS, 2015, 4 (02) : 249 - 253
  • [10] Black phosphorus mid-infrared photodetectors
    Xu, Mei
    Gu, Yuqian
    Peng, Ruoming
    Youngblood, Nathan
    Li, Mo
    APPLIED PHYSICS B-LASERS AND OPTICS, 2017, 123 (04):
12345