MOCVD of zirconium oxide thin films: Synthesis and characterization

被引:33
|
作者
Torres-Huerta, A. M. [1 ]
Dominguez-Crespo, M. A. [1 ]
Ramirez-Meneses, E. [1 ]
Vargas-Garcia, J. R. [2 ]
机构
[1] Inst Politecn Nacl, Unidad Altamira, Ctr Invest Ciencia Aplicada & Tecnol Avanzada, Altamira 89600, Tamaulipas, Mexico
[2] Inst Politecn Nacl, Dept Met & Mat, ESIQIE, Mexico City 07300, DF, Mexico
关键词
ZrO2; CVD; Thin films; CHEMICAL-VAPOR-DEPOSITION; ZRO2; PHASE; STABILIZATION; PRECURSOR; STABILITY; GROWTH; ENERGY;
D O I
10.1016/j.apsusc.2008.11.059
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The synthesis of thin. films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide. films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO2 thin. films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (111) and (220) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from. film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码:4792 / 4795
页数:4
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