Highly-Integrated Scalable D-band Receiver Front-End Modules in a 130 nm SiGe Technology for Imaging and Radar Applications

被引：0

作者：

Aguilar, Erick ^{[1
]}

Issakov, Vadim ^{[2
]}

Weigel, Robert ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Tech Elect, D-90132 Erlangen, Germany

[2] Univ Magdeburg, Magdeburg, Germany

来源：

PROCEEDINGS OF THE 2020 GERMAN MICROWAVE CONFERENCE (GEMIC) | 2020年

关键词：

mm-wave; SiGe; receiver; imaging; radar;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-highly integrated, scalable D-Band receiver front-ends based on active and passive baluns which integrate a D-Band signal generator developed in a 130 nm SiGe technology are presented. The presented circuits exhibit a wide tuning range of 19 GHz around 110 GHz and achieve high conversion gains >20 dB and >12 dB for the active-based an passive-based approaches correspondingly. The new chips offer robust solutions for high-gain or high-linearity receivers while showing an extremely compact form factor. Both chips show competitive performance compared with state-of-the-art solutions. Due to their highly reduced area without compromising the power consumption, they can be directly integrated into high-density sensor arrays for imaging and radar applications.

引用

页码：68 / 71

页数：4

共 50 条

[1] Highly-Integrated <0.14 mm2 D-Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology
Aguilar, Erick
Issakov, Vadim
Weigel, Robert
[J]. 2019 IEEE 19TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2019, : 37 - 40
[2] A D-Band Transceiver Front-End for Broadband Applications in a 0.35μm SiGe Bipolar Technology
Chakraborty, Abhiram
Trotta, Saverio
Wuertele, Johann
Weigel, Robert
[J]. 2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 405 - 408
[3] Highly-Integrated Dual-Band Front-End Module for WLAN and WiMAX applications based on LTCC technology
Yatsenko, Andriy
Heyen, Johann
Saklmenko, Sergiy
Vorotnikov, Borys
Heide, Patric
[J]. 2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 13 - 16
[4] System design considerations of highly-integrated DAB receiver RF front-end
Su, HW
Chi, BY
Wang, ZH
[J]. IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 2005, 51 (04) : 1319 - 1325
[5] A Fully Integrated 120-GHz Six-Port Receiver Front-End in a 130-nm SiGe BiCMOS Technology
Laemmle, Benjamin
Schmalz, Klaus
Borngraeber, Johannes
Scheytt, J. Christoph
Weigel, Robert
Koelpin, Alexander
Kissinger, Dietmar
[J]. 2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 129 - 131
[6] D-Band Total Power Radiometer Front End in 90nm SiGe Technology
Ben Yishay, Roee
Elad, Danny
[J]. 2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,
[7] A D-Band Micromachined End-Fire Antenna in 130-nm SiGe BiCMOS Technology
Khan, Wasif Tanveer
Ulusoy, A. Cagri
Dufour, Gaetan
Kaynak, Mehmet
Tillack, Bernd
Cressler, John D.
Papapolymerou, John
[J]. IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 2015, 63 (06) : 2449 - 2459
[8] Design and Characterization of a D-Band SiGe HBT Front-End for Dicke Radiometers
Turkmen, Esref
Cetindogan, Barbaros
Yazici, Melik
Gurbuz, Yasar
[J]. IEEE SENSORS JOURNAL, 2020, 20 (09) : 4694 - 4703
[9] A 300-320 GHz Sliding-IF I/Q Receiver Front-End in 130 nm SiGe Technology
Singh, Sumit Pratap
Nokandi, Mostafa Jafari
Montaseri, Mohammad Hassan
Rahkonen, Timo
Leinonen, Marko E.
Parssinen, Aarno
[J]. 2023 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC, 2023, : 37 - 40
[10] 77 GHz automotive radar receiver front-end in SiGe:C BICMOS technology
Wang, Li
Borngraeber, Johannes
Winkler, Wolfgang
[J]. ESSCIRC 2006: PROCEEDINGS OF THE 32ND EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2006, : 388 - +

← 1 2 3 4 5 →