Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

被引：116
|
作者：
Kishino, Katsumi [1 ,2 ]
Nagashima, Kazuya [1 ]
Yamano, Kouji [1 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan
[2] Sophia Univ, Sophia Nanotechnol Res Ctr, Chiyoda Ku, Tokyo 1028554, Japan
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 01期
基金：
日本科学技术振兴机构;
关键词：
MOLECULAR-BEAM EPITAXY;
D O I：
10.7567/APEX.6.012101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the monolithic integration of green and orange InGaN-based nanocolumn light-emitting diodes (LEDs). Four nanocolumn LED crystals (LEDs 1 to 4), which consisted of regularly arranged InGaN-based nanocolumns in a triangular lattice of 400 nm lattice constant, were grown on the same GaN template on a (0001) sapphire substrate, with designed nanocolumn diameters D of 150, 190, 230, and 270 nm for LEDs 1-4, respectively. LEDs 1 to 3 operated under DC current injection at room temperature, emitting at 544, 583, and 597 nm, respectively. This experiment paves the way for the monolithic integration of three-primary-color nanocolumn LEDs. (C) 2013 The Japan Society of Applied Physics
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页数：3
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